US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Low-k dielectric and processes for forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,438, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Low-k dielectric and processes for forming same" was invented by Chia Cheng Chou (Keelung, Taiwan), Po-Cheng Shih (Hsinchu, Taiwan), Li Chun Te (Renwu Township, Taiwan) and Tien-I Bao (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma en...