US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Isolation structure for bond pad structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,577, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structure for bond pad structure" was invented by Sin-Yao Huang (Tainan, Taiwan), Jeng-Shyan Lin (Tainan, Taiwan), Shih-Pei Chou (Tainan, Taiwan) and Tzu-Hsuan Hsu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming a semiconductor device including a shallow trench isolation (STI) structure disposed between a first side and a second side of the semiconductor substrate. An intermetal dielectric structure comprising a first metal interco...