US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 22 for "Transistor contacts and methods of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,461, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor contacts and methods of forming thereof" was invented by Yung-Chin Hou (Taipei, Taiwan), Lee-Chung Lu (Taipei, Taiwan), Jiann-Tyng Tzeng (Hsinchu, Taiwan), Wei-Cheng Lin (Taichung, Taiwan), Chun-Yen Lin (Hsinchu, Taiwan) and Ching-Yu Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first transistor layer comprising a first gate electrode and a second transistor layer comprising a second gate electrode that is stacked with the first transistor layer. n intermetal structure comprising a conductiv...