ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,614, issued on Sept. 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Protection of STI features" was invented by Yun Chen Teng (Taipei, Taiwan), Sen-Hong Syue (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods for forming semiconductor devices are provided. A method includes forming a shallow trench isolation (STI) feature; forming a mask layer over the STI feature; depositing sacrificial material over the mask layer; and etching the sacrificial material to form sacrificial structures over the mask layer, wherein the mask layer p...