US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 22 for "Memory device including bottom electrode bridges and method of manufacture" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,572, issued on Sept. 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device including bottom electrode bridges and method of manufacture" was invented by MingYuan Song (Hsinchu, Taiwan), Chien-Min Lee (Zhudong Town, Taiwan) and Xinyu Bao (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device including bottom electrode bridges and a spin-orbit torque structure overlapping and physically coupled to the bottom electrode bridges and a method of forming the same are disclosed. In an embodiment, a memory includes a first electrode on a first via; a second electrode on a second v...