US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 2 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,394, issued on Sept. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the same" was invented by Sheng-Tsung Wang (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Min-Hsuan Lu (Hsinchu, Taiwan), Chia-Hung Chu (Taipei, Taiwan) and Shuen-Shin Liang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure includes forming nanostructures over a front side of a substrate. The method also includes forming a gate structure surrounding the nanostructures. The method also includes forming a source/dr...