US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,347, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines" was invented by Chih-Hsuan Cheng (Hsinchu, Taiwan), Chieh-Fang Chen (Hsinchu County, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan), Chieh-Yi Shen (Taipei, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Feng-Ching Chu (Pingtung County, Taiwan), Meng-Han Lin (Hsinchu, Taiwan), Feng-Cheng Yang (Zhudong Township, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming ...