US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 2 for "Image sensor pixel and metal shielding of charge storage device of image sensor pixel formed by one step process" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,456, issued on Sept. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Image sensor pixel and metal shielding of charge storage device of image sensor pixel formed by one step process" was invented by Cheng-Yen Li (Hsinchu, Taiwan), Chia-Chan Chen (Zhubei, Taiwan) and Meng-Chin Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided for light shielding a charge storage device of an image sensor pixel that includes a photosensitive device and the charge storage device and a dielectric layer covering the photosensitive device and the charge storage device. The method includes perfor...