ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,851, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High aspect ratio bosch deep etch" was invented by Yu-Hsing Chang (Taipei, Taiwan), Ming Chyi Liu (Hsinchu, Taiwan) and Shih-Chang Liu (Alian Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments pertain to a semiconductor device. The semiconductor device includes a semiconductor substrate including a trench extending downward into an upper surface of the semiconductor substrate. The trench includes a bottom surface and a plurality of scallops along sidewalls of the trench. An oxide layer lines the bottom surface and the...