US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "Cladding structure for semiconductor waveguide" (California Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,405,422, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Cladding structure for semiconductor waveguide" was invented by Chan-Hong Chern (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a semiconductor waveguide layer over a second dielectric layer and between sidewalls of a first dielectric layer. A first cladding layer is between the sidewalls of the first dielectric layer and directly over the semiconductor waveguide layer. A second cladding layer is between sidewalls of the second dielectric layer and directly under the semiconductor waveguide lay...