US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Fin structures having varied fin heights for semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,092, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin structures having varied fin heights for semiconductor device" was invented by Kuo-Cheng Chiang (Hsinchu County, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Shi Ning Ju (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming first and second fin field effect transistors (finFETs) on a substrate includes forming first and second fin structures of the first and second finFETs, respectively, on the substrate. The first and second fin structures have respective first and second vertical dimensions that ...