US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 15 for "Memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,740,037, issued on Sept. 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method for manufacturing the same" was invented by Ping-Wei Wang (Hsin-Chu, Taiwan), Jui-Wen Chang (Hsinchu, Taiwan) and Feng-Ming Chang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first pull-down (PD) transistor, a second PD transistor, a first pass-gate (PG) transistor, and a second PG transistor arranged in a first direction and share a first active area, and a first pull-up (PU) transistor, a second PU transistor, a first dielectric structure, and a second dielectric structu...