US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Transistor gate structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,222, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate structures and methods of forming the same" was invented by Tsung-Da Lin (Pingtung County, Taiwan), Chia-Wei Hsu (New Taipei City, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method includes: forming a gate dielectric layer on a channel region of a semiconductor feature; depositing a work function tuning layer on the gate dielectric layer, the work function tuning layer including a first work function tuning element; depositing a capping layer on the work function tuni...