ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,196, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing semiconductor structure with thin film transistor" was invented by Marcus Johannes Henricus Van Dal (Linden, Belgium), Gerben Doornbos (Kessel-Lo, Belgium), Georgios Vellianitis (Heverlee, Belgium) and Mauricio Manfrini (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a bottom electrode layer over a substrate and forming a gate dielectric layer over t...