US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,724,061, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation" was invented by Yu-Ann Lai (Hsin-Chu, Taiwan), Ruo-Rung Huang (Hsin-Chu, Taiwan), Kun-Lung Chen (Chu Pei City, Taiwan), Chun-Yi Yang (Hsinchu City, Taiwan) and Chan-Hong Chern (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side G...