US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor structure having both gate-all-around devices and planar devices" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,686, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor structure having both gate-all-around devices and planar devices" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and a first transistor and a second transistor disposed over the substrate. The first transistor includes vertically stacked multiple first channels and a first metal gate structure wrapping around the vertically stacked multiple first channels, and the second transistor includes vertically stacked multiple second channels ...