US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device with elongated pattern" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,705, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with elongated pattern" was invented by Po-Chin Chang (Taichung City, Taiwan), Li-Te Lin (Hsinchu City, Taiwan) and Pinyen Lin (Rochester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a gate structure, a source/drain region, a source/drain contact, and a first conductive via. The gate structure is over the semiconductor substrate. The source/drain region is adjacent the gate structure. The source/drain contact is over the source/drain region. The first conductiv...