US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device with air gap and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,696, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with air gap and method for manufacturing the same" was invented by Hong-Chih Chen (Hsinchu, Taiwan), Fu-Hsiang Su (Hsinchu, Taiwan), Shih-Hsun Chang (Hsinchu, Taiwan), Chia-Hao Kuo (Hsinchu, Taiwan) and Chih-Ting Yeh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a plurality of metal portions, a plurality of nanosheet structures, and a plurality of isolation structures. The metal portions are disposed on the semiconductor substrate and are spaced ...