US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,695, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsin-chu, Taiwan).

"Semiconductor device having nanosheet transistor and methods of fabrication thereof" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Yu-San Chien (Hsinchu, Taiwan), Chun-Sheng Liang (Changhua, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a method for forming a semiconductor device structure, includes forming a fin structure having first semiconductor layers and second semiconductor layers alternatingly stacked thereover, forming a sacrificial gate s...