ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,682, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having nanosheet transistor and methods of fabrication thereof" was invented by Chia-Hao Chang (Hsinchu, Taiwan), Kuan-Ting Pan (Taipei, Taiwan), Jia-Chuan You (Taoyuan, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a dielectric wall disposed over a substrate, first and second metal gate structur...