US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 27 for "Methods of forming semiconductor devices including a capacitor and front and backside interconnect structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,915, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of forming semiconductor devices including a capacitor and front and backside interconnect structures" was invented by Chao-Kai Chan (Taichung City, Taiwan), Chung-Hao Tsai (Changhua County, Taiwan), Chuei-Tang Wang (Taichung City, Taiwan) and Wei-Ting Chen (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device is provided. A transistor is formed at a first side of the substrate and a first dielectric layer is formed aside the transistor. A first metal via is formed through the first ...