US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Materials and methods for forming resist bottom layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,775,213, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Materials and methods for forming resist bottom layer" was invented by Jing Hong Huang (Kaohsiung City, Taiwan), Chien-Wei Wang (Hsinchu County, Taiwan), Shang-Wern Chang (Hsinchu County, Taiwan) and Ching-Yu Chang (Yilang County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the s...