US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 27 for "Isolation structures for multi-gate devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,671, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Isolation structures for multi-gate devices" was invented by Ya-Yi Tsai (Hsinchu, Taiwan), Chi Yuen Pak (Hsinchu, Taiwan), Bo-Hong Chen (Kaohsiung, Taiwan), Han-Wei Chen (Hsinchu, Taiwan) and Yu-Hsien Lin (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure according to the present disclosure includes a substrate, a first base fin and a second base fin arising from the substrate, an isolation structure disposed between the first base fin and the second base fin, first channel members disposed over the fir...