ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,680, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Isolation for multigate devices" was invented by Cheng-Wei Chang (Taipei City, Taiwan), Shahaji B. More (Hsinchu City, Taiwan), Yi-Ying Liu (Hsinchu City, Taiwan), Shuen-Shin Liang (Hsinchu County, Taiwan) and Sung-Li Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary method includes forming a semiconductor fin having a semiconductor layer stack over a semiconductor mesa. The semiconductor layer stack includes a first semiconductor layer, a second semiconductor layer, and the first semiconductor layer is b...