ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,774,522, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Deposition apparatus and method with EM radiation" was invented by Tze-Liang Lee (Hsinchu, Taiwan) and Po-Hsien Cheng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamb...