US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 27 for "Back end dielectric-based memory structure in a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,909, issued on Oct. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Back end dielectric-based memory structure in a semiconductor device" was invented by Yun-Feng Kao (New Taipei City, Taiwan) and Katherine H. Chiang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a non-volatile memory structure that may be formed in a back end of line (BEOL) region of a semiconductor device. The non-volatile memory structure may include a dielectric-based one-time programmable (OTP) anti-fuse memory structure or a dielectric-based resistive random access memory (ReRAM), a...