US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Ferroelectric memory devices having improved ferroelectric properties and methods of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,137, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory devices having improved ferroelectric properties and methods of making the same" was invented by Po-Ting Lin (Hsinchu, Taiwan), Song-Fu Liao (Hsinchu, Taiwan), Rainer Yen-Chieh Huang (Changhua County, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Ferroelectric devices, including FeFET and/or FeRAM devices, include ferroelectric material layers deposited using atomic layer deposition (ALD). By controlling parameters of the...