US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Vias and via rails for source/drain metal full contact" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,408, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Vias and via rails for source/drain metal full contact" was invented by Wei-Hao Wu (Hsinchu City, Taiwan) and Kuan Chen (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "One aspect of the present disclosure pertains to a method of forming a semiconductor device. The method includes receiving a workpiece having a first metal gate stack over a first channel region, a second metal gate stack over a second channel region, a source/drain (S/D) feature between the first and second channel regions, and an S/D contact over the S/D feat...