US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device with facet S/D feature and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,387, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with facet S/D feature and methods of forming the same" was invented by Zhi-Chang Lin (Zhubei City, Taiwan), Shih-Cheng Chen (New Taipei City, Taiwan), Jung-Hung Chang (Changhua County, Taiwan) and Lo-Heng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises alternately forming first semiconductor layers and second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semi...