US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device structure and methods of forming the same" (Belgian Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,380, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Marcus Johannes Henricus Van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure is provided. A complementary FET (CFET) device including a first FET device and a second FET device isolated with each other by a middle dielectric layer is formed. The first and second FET devices are stacked over each other in a vertical direction. A first inner spacer is formed immediately below and above a peripheral porti...