US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,398, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Han Yeh (Hsinchu, Taiwan), Yu-Lien Huang (Hsinchu, Taiwan), Yuan-Sheng Huang (Taichung, Taiwan) and Yung-Cheng Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method includes: forming a gate structure between an interlayer dielectric (ILD) layer on a substrate; forming a metal cap layer over the gate structure; treating a substrate surface in an inductively coupled plasma (ICP) chamber, the treating comprising oxidation of a surface of the met...