ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,451, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Protection of integrated circuit from ESD and PID risks" was invented by Chia-Lin Hsu (New Taipei City, Taiwan), Ching-Yun Chang (Hsinchu City, Taiwan), Yu-Ti Su (Hsinchu City, Taiwan) and Kuo-Ji Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit includes an electrostatic discharge protection circuit disposed along a major surface of a substrate, an internal circuit also disposed along the major surface but laterally spaced from the electrostatic discharge protection circuit, and a coupling capacitor operatively coup...