US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Embedded clamping diode to improve device ruggedness" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,449, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Embedded clamping diode to improve device ruggedness" was invented by Yu-Ying Lai (Changhua County, Taiwan), Po-Chih Su (New Taipei City, Taiwan) and Ruey-Hsin Liu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Damage to an LDMOS transistor from voltage overshoot in a power switching circuit operating at high switching speeds is prevented by embedding a diode under a drain region of the LDMOS transistor. The embedded diode is doped more heavily than a drift region of the LDMOS transistor and lowers a breakdown voltage of the LDMOS ...