US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Gate structures for multi-gate devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,275, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate structures for multi-gate devices" was invented by Shih-Hang Chiu (Taichung, Taiwan), Wei-Cheng Wang (Hsinchu, Taiwan), Kuan-Ting Liu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method according to the present disclosure includes providing a substrate that includes a dummy gate stack wrapping over an active region, and a spacer layer extending along sidewalls of the dummy gate stack, selectively removing the dummy gate stack to form a gate trench exposing the active region, depositin...