US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Semiconductor structure and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,133, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for manufacturing the same" was invented by Yao-Hsuan Lai (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin structure protruded from a substrate, nanostructures over the fin structure, and an isolation structure arranged adjacent to the fin structure. The isolation structure includes a dielectric material, a doped oxide layer on sidewalls and a bottom surface of the dielectric material, and an oxide layer on sidewalls and a bottom surface of the doped oxide ...