US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Self-aligned cut-metal layer method" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,145, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Self-aligned cut-metal layer method" was invented by Yu-Tse Lai (Hsinchu, Taiwan), Shih-Ming Chang (Hsinchu, Taiwan) and Ya-Hui Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming self-aligned vias and devices having self-aligned vias are provided. In some embodiments, a method includes forming a first via on a conductive layer. A mask is formed over the conductive layer, and the mask has an opening overlying a portion of the conductive layer and at least partially overlying the first via. A first line end of t...