US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Reduction of damages to source/drain features" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,818, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Reduction of damages to source/drain features" was invented by Hsin Yang Hung (Hsinchu, Taiwan), Wei-Syuan Dai (Hsinchu, Taiwan), Tsung-Yu Chiang (New Taipei, Taiwan) and Lung Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structure and methods of forming the same are provided. A semiconductor structure according to the present disclosure include a substrate that includes a first region and a second region adjacent the first region, a first fin disposed over the first region, a second fin disposed ove...