ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,178, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Reduction of cracks in redistribution structure" was invented by Ting-Ting Kuo (Hsinchu, Taiwan), Li-Hsien Huang (Hsinchu County, Taiwan), Tien-Chung Yang (Hsinchu, Taiwan), Yao-Chun Chuang (Hsinchu, Taiwan), Yinlung Lu (Hsinchu, Taiwan) and Jun He (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides methods and structures to prevent cracks in redistribution layers. A redistribution structure according to the present disclosure includes a first polymer layer disposed over a silicon substrate, a first ...