US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Method for forming multi-gate semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,772, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming multi-gate semiconductor structure" was invented by Chun-Ming Yang (Taipei, Taiwan), Yu-Jiun Peng (Hsinchu, Taiwan) and Yu-Wen Wang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a multi-gate semiconductor structure is provided. A substrate including a fin structure is received. First portions of the fin structure are removed to expose a source/drain region of the fin structure. A semiconductor layer is formed in the source/drain region. Second portions of the fin structure are remove...