US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Gate isolation features in semiconductor devices and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,343, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate isolation features in semiconductor devices and methods of fabricating the same" was invented by Shao-Jyun Wu (New Taipei, Taiwan), Yung Feng Chang (Hsinchu, Taiwan), Tung-Heng Hsieh (Hsinchu County, Taiwan) and Bao-Ru Young (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first and second semiconductor fins protruding from a substrate. Each of the first and second semiconductor fins includes a stack of alternating channel layers and non-channel layers. The method also includes forming a die...