US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Gate-all around transistor with isolating feature under source/drain" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,353, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate-all around transistor with isolating feature under source/drain" was invented by Yu-Xuan Huang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Hou-Yu Chen (Zhubei, Taiwan) and Kuan-Lun Cheng (Hsin-chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes semiconductor material layers stacked above a substrate along a first direction and a gate structure wrapping around the semiconductor material layers. The semiconducto...