US Patent Issued to Taiwan Semiconductor Manufacturing on May 5 for "Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)" (Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,998, issued on May 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)" was invented by Tzu-Yu Chen (Kaohsiung City, Taiwan), Kuo-Chi Tu (Hsin-Chu, Taiwan), Sheng-Hung Shih (Hsinchu City, Taiwan) and Fu-Chen Chang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a ferroelectric random access memory (FeRAM) device. The FeRAM device includes a bottom electrode structure and a top electrode overlying the ferroelectric structure. The top electrode has a first width as measured between oute...