US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 5 for "Lithography techniques for reducing defects" (Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,619,154, issued on May 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Lithography techniques for reducing defects" was invented by Ming-Hui Weng (New Taipei City, Taiwan) and Ching-Yu Chang (Yilan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist...