ALEXANDRIA, Va., May 5 -- United States Patent no. 12,619,148, issued on May 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Crosslinkable photoresist for extreme ultraviolet lithography" was invented by Li-Po Yang (Hsinchu, Taiwan), Wei-Han Lai (Hsinchu, Taiwan) and Ching-Yu Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer compris...