ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,174, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"System and method for improving efficiency of multi-storage-row compute-in-memory" was invented by Xiaoyu Sun (Hsinchu City, Taiwan), Brian Crafton (Hsinchu City, Taiwan) and Murat Kerem Akarvardar (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes an array, a first buffer, a second buffer, a fetch circuit, and a controller. The fetch circuit can be configured to fetch a first subset of a first data elements from the first buffer and temporarily store the first subset of the first data elements, during a f...