US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Multi-port SRAM structure with gate-all-around transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,767, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-port SRAM structure with gate-all-around transistors" was invented by Ping-Wei Wang (Hsin-Chu, Taiwan), Feng-Ming Chang (Hsinchu County, Taiwan) and Jui-Lin Chen (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a first active region providing a plurality of first nano-structures for a write-port pass-gate transistor, a second active region providing a plurality of second nano-structures for a write-port pull-up transistor, and a third active region providing a plurality of third nano-structures for...