ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,215, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices with stacking circuits and methods of operating thereof" was invented by Min-Shin Wu (Hsinchu, Taiwan) and Meng-Sheng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit may comprise a memory array comprising a plurality of memory cells, an input/output (I/O) circuit, and a power management circuit. The I/O circuit can be operatively coupled to the memory array and configured to read or write each of the memory cells. The power management circuit can be operatively coupled to the memory array and the...