US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Memory device with back-gate transistor and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,770, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device with back-gate transistor and method of forming the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Hsinchu County, Taiwan), Ya-Yun Cheng (Taichung, Taiwan) and Peng-Chun Liou (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming an interconnect structure over a substrate, the forming of the interconnect structure includes forming a memory device including a transistor. The forming of the interconnect structure includes: forming a first metallization layer and a second metall...