ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,179, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinch, Taiwan).
"Memory circuit, interface circuit for memory circuit, and method of operating memory circuit" was invented by Chen-Wei Liang (Hsinchu, Taiwan) and Gu-Huan Li (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a memory array, and a peripheral circuit. The peripheral circuit includes an internal clock generating circuit, and a first access signal generating circuit. The internal clock generating circuit is configured to, in response to a control signal pulse, generate a series of internal clock pulses at an in...