US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Integrated circuit, system and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,769, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit, system and method of forming the same" was invented by Yen Lin CHUNG Chung (Hsinchu, Taiwan), Kao-Cheng Lin (Hsinchu, Taiwan), Wei Min Chan (Hsinchu, Taiwan) and Yen-Huei Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dual-port memory cell includes a first, second, third, and fourth pass-gate transistor, and a first and a second word line. The first pass-gate transistor includes a first gate on a first level. The second pass-gate transistor includes a second gate on a second level below the first level...